Related Experiment Video
Updated: Dec 7, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Severe Dirac Mass Gap Suppression in Sb2Te3-Based Quantum Anomalous Hall Materials
Yi Xue Chong1,2, Xiaolong Liu1,3, Rahul Sharma1,2
1LASSP, Department of Physics, Cornell University, Ithaca, New York 14853, United States.
Disorder in Dirac energy and mass gaps limits the quantum anomalous Hall effect in ferromagnetic topological insulators to low temperatures. This electronic disorder in surface states suppresses the mass gap, hindering the effect
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Phenomena
Background:
- The quantum anomalous Hall (QAH) effect arises in ferromagnetic topological insulators (FMTIs) due to a Dirac mass gap in surface states.
- Despite a significant mean mass gap, the QAH effect is often observed only below 1 K.
Purpose of the Study:
- To investigate the reasons behind the low-temperature limitation of the QAH effect in FMTIs.
- To compare the electronic structure of a Cr-doped FMTI with its nonmagnetic parent material.
Main Methods:
- Atomic-resolution Landau level spectroscopic imaging.
- Comparative analysis of Cr0.08(Bi0.1Sb0.9)1.92Te3 and (Bi0.1Sb0.9)2Te3 electronic structures.
Main Results:
- Spatially random variations in Dirac energy were observed in the nonmagnetic parent material.
- Similar Dirac energy variations and uncorrelated mass gap disorder were found in the FMTI.
- These electronic disorders collectively reduce the minimum mass gap to below 100 μeV in nanoscale regions.
Conclusions:
- Electronic disorder in surface states is the primary cause for the low-temperature detection of the QAH effect.
- The combined effects of Dirac energy variations and mass gap disorder fundamentally limit the QAH effect in Sb2Te3-based FMTIs.
Related Concept Videos
π Electron Effects on Chemical Shift: Overview
Molecular Orbital Theory II
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Valence Bond Theory
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

