Comparative Study of Growth Morphologies of Ga₂O₃ Nanowires on Different Substrates

Gallium oxide (Ga₂O₃) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga₂O₃ nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga₂O₃ nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO₂ on n-Si, 250 nm Si₃N₄ on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga₂O₃ nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga₂O₃ nanowire growth directly on the surfaces of various types of substrates using silver catalysts.