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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Temperature Dependence of G and D' Phonons in Monolayer to Few-Layer Graphene with Vacancies

Mingming Yang1, Longlong Wang1, Xiaofen Qiao2

  • 1Hebei Key Laboratory of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Baoding, 071002, People's Republic of China.

Nanoscale Research Letters
|September 30, 2020
PubMed

Keywords:
DefectsRaman spectraTemperature dependenceThickness dependence

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