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Updated: Dec 7, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
On the structure and electronic properties of Fe2V0.8W0.2Al thin films
E Alleno1, A Berche, J-C Crivello
1Univ Paris Est Creteil, ICMPE, UMR CNRS UPEC 7182, 2 rue Henri Dunant, F94320 Thiais, France. alleno@icmpe.cnrs.fr.
Abstract:
A very large thermoelectric figure of merit ZT = 6 at 380 K has recently been reported for Fe2V0.8W0.2Al in the thin-film form (B. Hinterleitner et al., Nature, 2019, 576, 85-90). In this form, Fe2V0.8W0.2Al experimentally crystallizes in a disordered A2 crystal structure, different from its bulk-form structure (L21). The first-principles calculations of the electronic structure performed in A2-Fe2V0.8W0.2Al supercells generated by the special quasirandom structure (SQS) method are thus reported here. These calculations unambiguously indicate that A2-Fe2V0.8W0.2Al is a ferromagnetic metal at 0 K, displaying a small Seebeck coefficient at 400 K (<30 μV K-1). The present results contradict the scenario of the occurrence of a deep pseudo-gap at the Fermi level, previously invoked to justify ZT = 6 in Fe2V0.8W0.2Al thin films.

