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Published on: September 12, 2014
Probing the trap states in N-i-P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy
Weitao Lian1, Rongfeng Tang1, Yuyuan Ma1
1Hefei National Laboratory for Physical Sciences at Microscale, CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Abstract:
In this study, we provide fundamental understanding on defect properties of the Sb2(S,Se)3 absorber film and the impact on transmission of photo-excited carriers in N-i-P architecture solar cells by both deep level transient spectroscopy (DLTS) and optical deep level transient spectroscopy (ODLTS) characterizations. Through conductance-voltage and temperature-dependent current-voltage characterization under a dark condition, we find that the Sb2(S,Se)3 solar cell demonstrates good rectification and high temperature tolerance. The DLTS results indicates that there are two types of deep level hole traps H1 and H2 with active energy of 0.52 eV and 0.76 eV in the Sb2(S,Se)3 film, and this defect property is further verified by ODLTS. The two traps hinder the transmission of minority carrier (hole) and pinning the Fermi level, which plays a negative role in the improvement of open-circuit voltage for Sb2(S,Se)3 solar cells. This research suggests a critical direction toward the efficiency improvement of Sb2(S,Se)3 solar cells.
