Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

455
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
455
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.4K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.4K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

733
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
733
Biasing of FET01:22

Biasing of FET

544
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
544
P-N junction01:11

P-N junction

940
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
940
Source Transformation for AC Circuits01:11

Source Transformation for AC Circuits

926
The process of source transformation in the frequency domain entails the conversion of a voltage source, positioned in series with an impedance, into a current source that is parallel to an impedance, or the other way around. It is essential to maintain the following relationships while transitioning from one source type to another.
926

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Nonadiabatic Quantum Dynamics of Molecules Scattering from Metal Surfaces.

Journal of chemical theory and computation·2025
Same author

Current-driven mechanical motion of double stranded DNA results in structural instabilities and chiral-induced-spin-selectivity of electron transport.

The Journal of chemical physics·2024
Same author

A physically realizable molecular motor driven by the Landauer blowtorch effect.

The Journal of chemical physics·2023
Same author

First-passage time theory of activated rate chemical processes in electronic molecular junctions.

The Journal of chemical physics·2021
Same author

A model for dynamical solvent control of molecular junction electronic properties.

The Journal of chemical physics·2021
Same author

Non-adiabatic effects of nuclear motion in quantum transport of electrons: A self-consistent Keldysh-Langevin study.

The Journal of chemical physics·2020
Same journal

The influence of chirality on the macroscopic behavior of multiferroic smectic phases.

The Journal of chemical physics·2026
Same journal

Polaron transformed canonically consistent quantum master equation.

The Journal of chemical physics·2026
Same journal

The x-ray absorption spectrum of the propargyl radical C3H3●.

The Journal of chemical physics·2026
Same journal

Transient hydroperoxyalkyl intermediates (•QOOH) in isopentane oxidation. I. Conformer- and isomer-resolved infrared spectra.

The Journal of chemical physics·2026
Same journal

Transient hydroperoxyalkyl intermediates (•QOOH) in isopentane oxidation. II. Isomer-resolved unimolecular dynamics.

The Journal of chemical physics·2026
Same journal

Quantum state-to-state dynamics studies of the C(3P) + OH(X2Π) → CO(a3Π) + H(2S) reaction based on a new HCO(12A″) potential energy surface.

The Journal of chemical physics·2026
See all related articles

Related Experiment Video

Updated: Dec 7, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.1K

Cooling molecular electronic junctions by AC current.

Riley J Preston1, Thomas D Honeychurch1, Daniel S Kosov1

  • 1College of Science and Engineering, James Cook University, Townsville, QLD 4811, Australia.

The Journal of Chemical Physics
|October 2, 2020
PubMed
Summary
This summary is machine-generated.

This study proposes a method to cool molecular electronic junctions using AC voltage, significantly reducing temperature and improving device stability for future electronics. This enhances the viability of single-molecule electronics.

More Related Videos

AC Electrokinetic Phenomena Generated by Microelectrode Structures
20:38

AC Electrokinetic Phenomena Generated by Microelectrode Structures

Published on: July 28, 2008

11.8K
Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
11:21

Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving

Published on: March 30, 2017

7.8K

Related Experiment Videos

Last Updated: Dec 7, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.1K
AC Electrokinetic Phenomena Generated by Microelectrode Structures
20:38

AC Electrokinetic Phenomena Generated by Microelectrode Structures

Published on: July 28, 2008

11.8K
Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving
11:21

Cooling an Optically Trapped Ultracold Fermi Gas by Periodical Driving

Published on: March 30, 2017

7.8K

Area of Science:

  • Molecular electronics
  • Quantum thermodynamics
  • Materials science

Background:

  • Molecular electronic junctions dissipate energy to vibrations, causing bond rupture and limiting device lifespan.
  • Mechanical instability is a major challenge for the technological viability of single-molecule electronics.

Purpose of the Study:

  • To propose and investigate a practical scheme for cooling molecular vibrational temperatures in electronic junctions.
  • To enhance the stability and performance of molecular electronic devices.

Main Methods:

  • Utilizing nonequilibrium Green's functions to model electron-driven nuclear dynamics.
  • Calculating viscosity and diffusion coefficients of nuclei in a driven electron sea.
  • Deducing effective molecular junction temperature by balancing transport coefficients.

Main Results:

  • Demonstrated a method to cool molecular junction temperatures by over 40%.
  • Achieved significant cooling while maintaining a stable average current.
  • Showcased the potential for enhanced mechanical stability in molecular junctions.

Conclusions:

  • AC voltage application over DC bias offers a viable strategy for active cooling of molecular junctions.
  • This cooling mechanism can mitigate bond rupture and improve the operational lifespan of molecular electronic devices.
  • The findings pave the way for more robust and technologically feasible single-molecule electronics.