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Updated: Dec 7, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

Shahab N Alam1,2,3, Vitaly Z Zubialevich4, Bijan Ghafary3

  • 1Tyndall National Institute, Lee Maltings Dyke Parade, Cork, Ireland.

Scientific Reports
|October 2, 2020
PubMed

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