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Updated: Dec 7, 2025

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Published on: May 24, 2020
Effects of Capping Layers with Different Metals on Electrical Performance and Stability of p-Channel SnO Thin-Film
Min-Gyu Shin1, Kang-Hwan Bae1, Hwan-Seok Jeong1
1School of Electrical and Electronics Engineering, Chung‑Ang University, Seoul 06974, Korea.
Abstract:
In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.
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