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Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor

Andrei A Gismatulin1, Vitalii A Voronkovskii1, Gennadiy N Kamaev1

  • 1Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090, Novosibirsk, Russia.

Nanotechnology
|October 6, 2020
PubMed

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