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Updated: Dec 6, 2025
Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells
Published on: March 19, 2017
Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted
Ahmed Mourtada Elseman1, Lie Luo2, Qun Liang Song2
1Institute for Clean Energy and Advanced Materials, School of Materials and Energy, Southwest University, Chongqing 400715, P. R. China. qlsong@swu.edu.cn AhmedMourtada5555@yahoo.com and Electronic & Magnetic Materials Department, Advanced Materials Division, Central Metallurgical Research and Development Institute (CMRDI), Helwan, P.O. Box 87, Cairo 11421, Egypt.
Abstract:
Nickel oxide (NiOx) as a hole transport layer has been vastly investigated in perovskite solar cells (PSCs) due to the nature of p-type doping, highly transparent materials, and deep-lying valence bands. In this paper, a new phase based on trivalent Ni2O3 is synthesized by low temperature solution processing of mixed nickel (acetate/nitrate). In comparison, high-temperature solution-processing of divalent NiOx resulted in novel Ni2O3 thin films that display better consistency and superior energy compatibility with perovskite thin films. In this respect, high-performance perovskite solar cells are efficiently produced utilizing MA0.85FA0.15PbI0.9Cl0.1 perovskite with a power conversion efficiency (PCE) reaching 17.89% and negligible hysteresis comparable to 14.37% for NiOx. The Ni2O3-based PSCs reported the highest fill factor (FF) (82.66%) compared to that of divalent NiOx (67.53%). Different characterization studies and analyses supply proof of improved film quality, increased transport and extraction of charges, and suppressed charge recombination. Meanwhile, the device exhibits low hysteresis compared to sol-gel-processed NiOx.
