Related Experiment Video
Updated: Dec 6, 2025

Reductive Electropolymerization of a Vinyl-containing Poly-pyridyl Complex on Glassy Carbon and Fluorine-doped Tin Oxide Electrodes
Published on: January 30, 2015
Chemistry of ruthenium as an electrode for metal-insulator-metal capacitor application
Eui Young Jung1, Jeongil Bang2, Ji Hyeon Hwang1,3
1Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 17104, Republic of Korea.
Abstract:
Notwithstanding its excellent properties such as high work function and low resistance, Ru has not been widely applied in the preparation of electrodes for various electronic devices. This is because of the occurrence of severe morphological degradation in the actual devices employing Ru. Herein, we investigated Ru chemistry for electrode application and the degradation mechanism of Ru during subsequent processes such as thin film deposition or thermal annealing. We revealed that subsurface oxygen induces Ru degradation owing to the alteration of Ru chemistry by the pretreatment under various gas ambient conditions and due to the growth behavior of TiO2 deposited via atomic layer deposition (ALD). The degradation of Ru is successfully ameliorated by conducting an appropriate pretreatment prior to ALD. The TiO2 thin film deposited on the pretreated Ru electrode exhibited a rutile-phased crystal structure and smooth surface morphology, thereby resulting in excellent electrical properties. This paper presents an important development in the application of Ru as the electrode that can facilitate the development of various next-generation electronic devices.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Properties of Transition Metals
Capacitor With A Dielectric
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...

