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Updated: Dec 6, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
D Josell1, M E Williams1, S Ambrozik1
1Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
This study demonstrates void-free, bottom-up gold electrodeposition in high-aspect-ratio trenches using a novel electrolyte. Researchers explored strategies to improve deposition speed and analyzed the resulting gold grain structures.
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