Large photocurrent density enhancement assisted by non-absorbing spherical dielectric nanoparticles in a GaAs layer

Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO₂) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN ([Formula: see text] coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles' surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles' case.