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Updated: Dec 5, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Alana Gudinas1, Jason Moscatello1, Shawna M Hollen1
1University of New Hampshire, Department of Physics and Astronomy, 9 Library Way, Durham, NH 03824, United States of America.
This study introduces the Defect Identification and Statistics Toolbox (DIST), a new software for analyzing atomic defects in scanning probe microscopy (SPM) images. DIST automates defect analysis, improving accuracy and efficiency.
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