Effect of low level laser therapy on crestal bone levels around dental implants-A pilot study

Implant success is affected by initial bone resorption at the implant surface. Continuous efforts have been made to reduce the peri-implant crestal bone loss. Limited information is available regarding the influence of low level laser therapy (LLLT) on interaction between the bone and implant surface.

The aim of this pilot study was to assess the effect of LLLT on peri-implant crestal bone levels.

Twenty implants were placed in 20 patients who were randomly assigned to two groups. Group I patients' received no adjunctive treatment and group II patients' were administered LLLT using 980 nm diode laser at 0.1 W output power following implant placement. The energy density of 4 J/cm² was delivered at six sites for a duration of 10 seconds per site. Crestal bone levels were evaluated primarily using digital intraoral periapical (IOPA) radiograph. The measurements were made immediately (T0) and 6 weeks (T1) post implant placement; and 6 months (T2) and 1 year (T3) post prosthetic loading time intervals and compared using repeated measures ANOVA test.

Crestal bone levels at baseline were statistically not significant between groups (P = .880). At T3 time interval, the mean change in crestal bone levels around all anatomical implant sites measured was 0.81 (SE 0.04) mm for irradiated group and 0.97 (SE 0.04) mm for nonirradiated group. Intergroup analysis revealed statistically significant (P = .020) less crestal bone loss in group that received LLLT.

Under the conditions of this study, LLLT reduced the crestal bone resorption surrounding dental implants.

The present clinical trial was not registered.