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Analysis of Contact Interfaces for Single GaN Nanowire Devices
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High performance complementary WS2 devices with hybrid Gr/Ni contacts.

Muhammad Farooq Khan1, Faisal Ahmed2, Shania Rehman1

  • 1Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Korea. mfk@sejong.ac.kr.

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A novel hybrid graphene/nickel contact enables tunable carrier types in tungsten disulfide (WS2) for advanced electronics. This doping-free method overcomes Fermi level pinning, paving the way for high-performance 2D material devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional (2D) transition metal dichalcogenides (TMDs) show promise for solid-state electronics.
  • Challenges include Fermi level pinning and doping difficulties, hindering high-performance complementary devices.

Purpose of the Study:

  • To develop a doping-free method for carrier type modulation in 2D materials.
  • To investigate the performance of hybrid contacts for 2D material-based devices.

Main Methods:

  • Fabrication of hybrid graphene/nickel (Gr/Ni) contacts on WS2.
  • Asymmetric contact engineering with Ni and Gr/Ni on multilayer WS2.
  • Characterization of device performance, including rectification and photovoltaic properties.

Main Results:

  • Achieved n-type to p-type carrier switching in WS2 via hybrid Gr/Ni contacts.
  • Demonstrated synergistic p-n diode characteristics with current rectification >10^4.
  • Observed high photovoltaic performance with photoresponsivity of 4 × 10^4 A/W at 532 nm.

Conclusions:

  • Hybrid Gr/Ni contacts effectively alleviate Fermi level pinning and enable carrier type modulation in WS2.
  • The developed technique facilitates high-performance 2D material-based complementary electronics and optoelectronics.
  • This doping-free approach offers a pathway for next-generation 2D electronic and optoelectronic devices.