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Potential Due to a Magnetized Object

Potential Due to a Magnetized Object

Magnetic dipoles in magnetic materials are aligned when placed under an external magnetic field. For paramagnets and ferromagnets, dipole alignment occurs in the direction of the magnetic field. However, the dipoles align opposite to the field in the case of diamagnets. This state of magnetic polarization due to the external field is called magnetization. Magnetization is defined as the dipole moment per unit volume. It plays a similar role to polarization in electrostatics.
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Magnetostatic Boundary Conditions

Magnetostatic Boundary Conditions

An electric field suffers a discontinuity at a surface charge. Similarly, a magnetic field is discontinuous at a surface current. The perpendicular component of a magnetic field is continuous across the interface of two magnetic mediums. In contrast, its parallel component, perpendicular to the current, is discontinuous by the amount equal to the product of the vacuum permeability and the surface current. Like the scalar potential in electrostatics, the vector potential is also continuous...

Types Of Superconductors

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A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Paramagnetism

Paramagnetism

Paramagnets are materials with unpaired electrons that possess a finite magnetic moment. In the absence of a magnetic field, these moments are randomly oriented, and thus the net moment is zero. Under an external field, a torque acting on the moments tends to align them along the field's direction. However, the random thermal motion of electrons produces a torque opposite to the external field and tries to disorient the moments. These two competing effects align only a few moments along the...

Diamagnetism

Diamagnetism

Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....

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Related Experiment Video

Updated: Dec 5, 2025

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7ÃƒÆ’Ã‚Â¢Ãƒâ€¹Ã¢â‚¬Â 'ÃƒÆ’Ã…Â½ Â´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7ÃƒÆ’Ã‚Â¢Ãƒâ€¹Ã¢â‚¬Â 'ÃƒÆ’Ã…Â½ Â´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

Published on: April 12, 2019

Magnetized topological insulator multilayers.

Chao Lei¹, Shu Chen^1,2, Allan H MacDonald³

¹Department of Physics, The University of Texas at Austin, Austin, TX 78712.

Proceedings of the National Academy of Sciences of the United States of America

|October 20, 2020

Summary

This summary is machine-generated.

We explore magnetic and topological properties in thin films made of magnetized topological insulators. Stacking order and thickness control the quantum anomalous Hall effect in these novel materials.

Keywords:

MnBi2Te4 Weyl semimetal magnetized topological insulator quantum anomalous Hall effect topological superlattices

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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7ÃƒÆ’Ã‚Â¢Ãƒâ€¹Ã¢â‚¬Â 'ÃƒÆ’Ã…Â½ Â´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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Published on: January 21, 2016

Area of Science:

Condensed matter physics
Materials science
Solid-state physics

Background:

Topological insulators (TIs) exhibit unique electronic properties.
Magnetized TIs are crucial for realizing topological quantum phenomena.
Controlling thin-film heterostructures is key to novel quantum effects.

Purpose of the Study:

Investigate magnetic and topological properties of heterostructures formed by magnetized TI septuple and TI quintuple layers.
Develop a simplified model to explain the quantum anomalous Hall effect (QAHE) in these systems.
Guide the design of Weyl superlattices.

Main Methods:

Utilized a simplified model focusing on Dirac cone degrees of freedom.
Validated the model by comparing with ab initio density-functional theory (DFT) calculations.
Analyzed the dependence of QAHE on film thickness, magnetic configuration, and stacking order.

Main Results:

The simplified model accurately captures the behavior of thin films.
Film thickness, magnetic configuration, and stacking arrangement dictate the presence of QAHE.
Identified key factors for designing Weyl superlattices.

Conclusions:

A coupled Dirac cone model effectively explains QAHE in TI heterostructures.
Tailoring magnetic and topological insulator layer stacking offers control over quantum phenomena.
This work provides a pathway for designing advanced topological materials.