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Updated: Dec 5, 2025

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Yue Li1,2, Jikai Lu1,3, Dashan Shang1,2
1Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
This study introduces novel oxide-based electrolyte-gated transistors (EGTs) for spiking neural networks (SNNs). These EGTs enable efficient spatiotemporal information processing for energy-efficient neuromorphic computing in edge devices.
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