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Investigation of the Effect of Magnification, Accelerating Voltage, and Working Distance on the 3D Digital
Seyed Mahmoud Bayazid1, Nicolas Brodusch1, Raynald Gauvin1
1Department of Materials Engineering, McGill University, Montreal, Quebec, Canada H3A 2B2.
Abstract:
In this study, the effect of Scanning Electron Microscopy (SEM) parameters such as magnification (M), accelerating voltage (V), and working distance (WD) on the 3D digital reconstruction technique, as the first step of the quantitative characterization of fracture surfaces with SEM, was investigated. The 2D images were taken via a 4-Quadrant Backscattered Electron (4Q-BSE) detector. In this study, spherical particles of Ti-6Al-4V (15-45 μm) deposited on the silicon substrate were used. It was observed that the working distance has a significant influence on the 3D digital rebuilding method via SEM images. The results showed that the best range of the working distance for our system is 9 to 10 mm. It was shown that by increasing the magnification to 1000x, the 3D digital reconstruction results improved. However, there was no significant improvement by increasing the magnification beyond 1000x. In addition, results demonstrated that the lower the accelerating voltage, the higher the precision of the 3D reconstruction technique, as long as there are clean backscattered signals. The optimal condition was achieved when magnification, accelerating voltage, and working distance were chosen as 1000x, 3 kV, and 9 mm, respectively.
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