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An electric field suffers a discontinuity at a surface charge. Similarly, a magnetic field is discontinuous at a surface current. The perpendicular component of a magnetic field is continuous across the interface of two magnetic mediums. In contrast, its parallel component, perpendicular to the current, is discontinuous by the amount equal to the product of the vacuum permeability and the surface current. Like the scalar potential in electrostatics, the vector potential is also continuous...
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A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation.

Josep Maria Sánchez-Chiva1,2, Juan Valle1, Daniel Fernández3

  • 1Electronic Engineering Department, Universitat Politècnica de Catalunya, Jordi Girona 1-3, 08034 Barcelona, Spain.

Sensors (Basel, Switzerland)
|October 22, 2020
PubMed
Summary

This study introduces a new 2-axis CMOS-MEMS magnetometer that integrates with electronics, offering reduced size and cost for consumer devices. A novel shielding structure minimizes sensor offset, improving performance for Microelectromechanical Systems (MEMS) magnetometers.

Keywords:
Lorentz-forceMEMSmagnetic sensormagnetometermicromachined Resonatormicromechanical oscillatoroffset suppression

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Nanotechnology

Background:

  • Lorentz-force Microelectromechanical Systems (MEMS) magnetometers are emerging as cost-effective, miniaturized alternatives to traditional magnetometers in consumer electronics.
  • Current MEMS magnetometers suffer from low sensitivity and significant offsets, limiting their practical application.
  • Integration of MEMS devices with readout electronics on a single chip is a key goal for reducing form factor and manufacturing costs.

Purpose of the Study:

  • To propose and characterize a novel 2-axis out-of-plane, lateral field sensing CMOS-MEMS magnetometer.
  • To demonstrate the integration capability of the magnetometer with other MEMS devices and readout electronics using standard CMOS processes.
  • To introduce a shielding structure for offset cancellation and evaluate its effectiveness.

Main Methods:

  • Design of a 2-axis CMOS-MEMS magnetometer utilizing Back-End-Of-Line (BEOL) metal and oxide layers.
  • Implementation of a shielding structure to mitigate sensor offsets.
  • Full-wafer device characterization, including yield, resonance frequency, quality factor, and magnetic field sensitivity analysis.

Main Results:

  • The proposed CMOS-MEMS magnetometer achieves a minimum yield of 85.7%.
  • Device characterization shows good uniformity in resonance frequency (fr¯=56.8 kHz, σfr=5.1 kHz) and quality factor (Q¯=7.3, σQ=1.6) at ambient pressure.
  • A magnetic field sensitivity of 37.6 fA·μT⁻¹ was measured at 1130 Pa with a drive current of 1 mApp.

Conclusions:

  • The developed CMOS-MEMS magnetometer offers a viable solution for high-integration, low-cost magnetic sensing in consumer electronics.
  • The integrated design and offset-canceling shielding structure address key performance limitations of existing MEMS magnetometers.
  • Full-wafer characterization validates the device's performance and manufacturability, paving the way for commercial adoption.