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Two-dimensional stable Fe-based ferromagnetic semiconductors: FeI3 and FeI1.5Cl1.5 monolayers
1State Key Laboratory of Solidification Processing, Center for Advanced Lubrication and Seal Materials, School of Material Science and Engineering, Northwestern Polytechnical University, 127 YouYi Western Road, Xi'an, Shaanxi 710072, China. xlfan@nwpu.edu.cn.
Physical Chemistry Chemical Physics : PCCP
|October 22, 2020
Summary
We discovered a new 2D ferromagnetic semiconductor, the FeI3 monolayer, which is stable and shows promising properties for spintronic devices. Carrier doping enhances its performance, making it ideal for next-generation electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Two-dimensional (2D) ferromagnetic (FM) semiconductors are crucial for advanced spintronic devices.
- Developing stable and efficient 2D FM semiconductors remains a significant challenge.
Purpose of the Study:
- To report the discovery and characterization of an intrinsic 2D FM semiconductor, the FeI3 monolayer.
- To investigate the stability, magnetic properties, and electronic characteristics of the FeI3 monolayer.
- To explore the effects of carrier doping and isoelectronic substitution on the material's properties.
Main Methods:
- Exfoliation of FeI3 monolayer from its bulk crystal.
- Computational analysis of dynamic and mechanical stability.
- Calculation of magneto-crystalline anisotropy energy (MAE) and Curie temperature (Tc).
- Investigation of spin-dependent electronic band structure and carrier-induced property modulation.
Main Results:
- The FeI3 monolayer is dynamically and mechanically stable with a Curie temperature above 77 K.
- It exhibits sizable MAE and a significant difference in conduction band minimum between spin channels (Δcbm).
- Carrier doping (<0.1 e/unit cell) enhances MAE, Tc, and Δcbm.
- The isoelectronic analogue FeI1.5Cl1.5 monolayer is a bipolar FM semiconductor with Tc = 260 K.
Conclusions:
- The FeI3 monolayer is a promising intrinsic 2D FM semiconductor for next-generation spintronic applications.
- Its robust ferromagnetism and tunable semiconducting properties make it highly attractive.
- Further research into doping and alloying can optimize its performance for specific device requirements.
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