High-order DBR semiconductor lasers: effect of grating parameters on grating performance.

Area of Science:

• Optoelectronics
• Semiconductor Lasers
• Photonics

Background:

• Distributed Bragg reflector (DBR) semiconductor lasers are crucial for various optical applications.
• Achieving efficient mode selection and high performance often requires complex fabrication processes, including cavity surface coating.

Purpose of the Study:

• To theoretically demonstrate a high-order DBR semiconductor laser operating at 1064 nm.
• To achieve optimal Bragg grating characteristics for efficient mode selection.
• To propose a laser scheme that eliminates the need for cavity surface coating.

Main Methods:

• Simulation analysis was employed to design and optimize the DBR semiconductor laser.
• Four key parameters of the Bragg grating were meticulously analyzed.
• A 49th-order Bragg grating was designed with specific reflectivity (6%) and Full Width at Half Maximum (FWHM) (3 nm).

Main Results:

• The designed 49th-order Bragg gratings enable effective mode selection during lasing.
• The Bragg gratings were optimized to maximize light utilization within the laser structure.
• Theoretical transmission of the rear laser facet was determined to be zero.

Conclusions:

• The simulation results present a straightforward and highly effective DBR semiconductor laser design.
• This approach successfully achieves mode selection and efficient light use.
• The proposed scheme offers a viable alternative to traditional DBR lasers by omitting cavity surface coating.