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Free-form Light Actuators — Fabrication and Control of Actuation in Microscopic Scale

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Domain modulation in LiNbO₃ films using litho piezoresponse force microscopy.

Xiaojun Qiao¹, Wenping Geng¹, Dongwan Zheng¹

¹Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, People's Republic of China.

|October 28, 2020

Summary

Domain engineering in lithium niobate thin films is crucial for ferroelectric memory. Tip-induced electric fields effectively control domain dynamics, enabling precise polarization reversal for high-density memory applications.

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Last Updated: Dec 3, 2025

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Area of Science:

Materials Science
Condensed Matter Physics
Electrical Engineering

Background:

Domain engineering is essential for advancing ferroelectric non-volatile memory technology.
Lithium niobate (LiNbO3) is a key material for ferroelectric applications.

Purpose of the Study:

To investigate domain kinetics in ion-sliced single crystal LiNbO3 thin films.
To explore the effects of tip-induced electric fields on polarization reversal.
To optimize domain engineering strategies for high-density memory devices.

Main Methods:

Utilized piezoresponse force microscopy (PFM) to study domain dynamics.
Applied tip-induced electric fields to LiNbO3 thin films.
Investigated the dependence of domain reversal on pulse duration and amplitude.

Main Results:

Polarization reversal was observed above a threshold electric field (coercive voltage, Vc).
Domain dynamics were found to be dependent on pulse duration and amplitude.
Achieved specific local domain reversal (5 μm) under optimized poling conditions.

Conclusions:

Tip-induced polarization reversal is an effective method for domain engineering.
This technique shows significant promise for developing high-density non-volatile ferroelectric memory devices.