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Tuning layer-hybridized moiré excitons by the quantum-confined Stark effect
Yanhao Tang1, Jie Gu1, Song Liu2
1School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Nature Nanotechnology
|November 3, 2020
Summary
Researchers observed layer-hybridized moiré excitons in 2D semiconductor superlattices. These novel excitons show strong coupling effects and have implications for quantum states and optoelectronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Optics
Background:
- Moiré superlattices enable control over quantum particle interactions and electromagnetic field coupling.
- Strong potentials create moiré minibands of excitons, which can be intralayer or interlayer.
- Interlayer electronic hybridization can mix exciton types, combining their properties.
Purpose of the Study:
- To directly observe layer-hybridized moiré excitons in angle-aligned WSe2/WS2 and MoSe2/WS2 superlattices.
- To investigate the strong coupling signatures and electric field effects on these novel excitons.
- To explore doping-dependent renormalization and hybridization, sensitive to electronic correlation effects.
Main Methods:
- Optical reflectance spectroscopy was used to observe layer-hybridized moiré excitons.
- Angle-aligned WSe2/WS2 and MoSe2/WS2 superlattices were employed.
- Vertical electric fields were applied to study exciton behavior.
Main Results:
- Direct observation of layer-hybridized moiré excitons in WSe2/WS2 and MoSe2/WS2 superlattices.
- Demonstration of strong coupling signatures, including energy-level anticrossing and oscillator strength redistribution under an electric field.
- Observation of doping-dependent renormalization and hybridization influenced by electronic correlations.
Conclusions:
- The findings confirm the existence and unique properties of layer-hybridized moiré excitons.
- These excitons exhibit strong coupling phenomena and sensitivity to electronic correlations.
- The study has significant implications for understanding many-body states in 2D semiconductors and for optoelectronic applications.
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