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Updated: Dec 2, 2025

Time-resolved Photophysical Characterization of Triplet-harvesting Organic Compounds at an Oxygen-free Environment Using an iCCD Camera

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New Data Analysis Method for Time-Resolved Infrared Photoluminescence Spectroscopy.

Kacper Grodecki¹, Krzysztof Murawski¹

¹Military University of Technology Ringgold Standard Institution, Warsaw, Poland.

Applied Spectroscopy

|November 3, 2020

Summary

A novel data treatment using time-resolved photoluminescence functions as an infrared streak camera. This method analyzes mercury cadmium telluride (HgCdTe) samples, revealing insights into signal behavior with three distinct time constants.

Keywords:

MOCVD Time-resolved photoluminescence infrared spectroscopy mercury–cadmium–telluride metal organic chemical vapor deposition

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Area of Science:

Materials Science
Optoelectronics
Spectroscopy

Background:

Time-resolved photoluminescence (TRPL) is a crucial technique for characterizing semiconductor materials.
Existing methods may have limitations in infrared spectral ranges.
Understanding carrier dynamics is essential for optoelectronic device performance.

Purpose of the Study:

To introduce a new data treatment method for time-resolved photoluminescence.
To demonstrate its application as an infrared streak camera.
To analyze the carrier dynamics in HgCd0.33Te0.67 at 120 K.

Main Methods:

Development of a novel data treatment for time-resolved photoluminescence.
Application of the method to a HgCd0.33Te0.67 sample at 120 K.
Comparison of results with existing literature data.

Main Results:

The proposed data treatment effectively functions as a streak camera for infrared applications.
Analysis of the HgCd0.33Te0.67 sample revealed a photoluminescence spectrum at 120 K.
Three distinct time constants were identified within the measured signal.

Conclusions:

The new TRPL data treatment offers a viable alternative for infrared streak camera applications.
The study provides an interpretation for the observed multi-exponential decay behavior in HgCdTe.
This work contributes to a deeper understanding of carrier recombination mechanisms in HgCdTe.