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Experimental quantification of atomically-resolved HAADF-STEM images using EDX.

K Pantzas1, G Patriarche1

  • 1Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies - C2N, Palaiseau 91120, France.

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|November 3, 2020
PubMed
Summary
This summary is machine-generated.

Atomically-resolved indium composition mapping in Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) quantum wells was achieved using HAADF-STEM. This method offers insights into InGaN growth dynamics and enables precise material analysis.

Keywords:
Compositional mappingsHAADF-STEMQuantificationSemiconductorsStrain-state analysis

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) multi-quantum wells are crucial for optoelectronic devices.
  • Accurate atomic-scale composition mapping is essential for understanding their growth and properties.

Purpose of the Study:

  • To develop a method for atomically-resolved indium composition mapping in InGaN/GaN.
  • To gain insights into the growth mechanisms of InGaN.
  • To explore strain analysis for composition estimation.

Main Methods:

  • Quantification of High-Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) contrast.
  • Calibration of HAADF-STEM contrast using Energy-Dispersive X-ray (EDX) spectroscopy.
  • Peak-Pair Analysis for strain-state determination.

Main Results:

  • Atomically-resolved indium composition maps of InGaN/GaN multi-quantum wells were generated.
  • InGaN growth was observed to occur in discrete monolayer increments, indicating nucleation limitations.
  • Strain mapping provided composition estimates consistent with HAADF-STEM quantification.

Conclusions:

  • The presented quantification method offers a computationally efficient approach for atomic-scale composition analysis.
  • The findings provide detailed insights into the step-flow growth mechanism of InGaN.
  • The study suggests avenues for precise atomic-scale quantification of complex alloys.