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Updated: Dec 2, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Resistive switching in diamondoid thin films
A Jantayod1,2, D Doonyapisut2, T Eknapakul2
1Department of Physics, Faculty of Science, Naresuan University, Phitsanulok, 65000, Thailand.
Abstract:
The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through [Formula: see text] linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.
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