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Updated: Dec 2, 2025

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Monolithic 1 × 8 DWDM Silicon Optical Transmitter Using an Arrayed-Waveguide Grating and Electro-Absorption

Uiseok Jeong1, Dong Ho Lee2, Kyungwoon Lee3

  • 1School of Electrical Engineering, Korea University, Anam-Dong, Seongbuk Gu, Seoul 02841, Korea.

Micromachines
|November 6, 2020
PubMed
Summary

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This summary is machine-generated.

This study introduces an eight-channel silicon optical transmitter using electro-absorption modulators (EAMs). This device is suitable for data center interconnects, demonstrating CMOS compatibility.

Area of Science:

  • Photonics and Optical Engineering
  • Integrated Optics
  • Semiconductor Devices

Background:

  • High-density wavelength-division multiplexing (DWDM) is crucial for data center interconnects.
  • Silicon photonics offers a promising platform for integrated optical transmitters.
  • Existing solutions often face challenges in terms of integration and cost.

Purpose of the Study:

  • To develop an eight-channel monolithic silicon optical transmitter.
  • To utilize silicon electro-absorption modulators (EAMs) for dense wavelength division multiplexing (DWDM).
  • To assess the feasibility for intra-data-center interconnects and CMOS compatibility.

Main Methods:

  • Design and fabrication of a monolithic transmitter integrating a 1x8 silicon arrayed-waveguide grating (AWG) and eight EAMs.
Keywords:
AWGelectro-absorptionmodulatoroptoelectronicssilicontransmitterwaveguide

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  • Employing free-carrier injection by Schottky junctions for EAM operation.
  • Utilizing a single broadband light source for generating eight DWDM channels.

    • Main Results:

    • Successful generation of eight-channel DWDM outputs with 1.33 nm channel spacing in the C-band.
    • Achieved over 3 dB modulation depth per channel at 6 V peak-to-peak.
    • Demonstrated a compact transmitter footprint (5.41 x 2.84 mm^2).

    Conclusions:

    • The proposed silicon EAM-based DWDM transmitter is feasible for intra-data-center interconnects.
    • The monolithic design offers advantages for heterogeneous integration and CMOS compatibility.
    • This technology paves the way for cost-effective and high-performance optical interconnects in data centers.