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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Surface Science

Background:

  • High doping levels in graphene can occupy the van Hove singularity in the π* band.
  • This occupation may lead to exotic ground states driven by many-body interactions.

Purpose of the Study:

  • To dope epitaxial graphene beyond the π* van Hove singularity.
  • To investigate the resulting electronic structure and Fermi surface topology.
  • To explore the beyond-van-Hove regime in graphene.

Main Methods:

  • Utilized ytterbium intercalation and potassium adsorption for n-doping epitaxial graphene on silicon carbide.
  • Achieved charge carrier densities up to 5.5×10^14 cm^-2.
  • Employed angle-resolved photoelectron spectroscopy (ARPES) to analyze electronic structure.

Main Results:

  • Successfully doped graphene past the π* van Hove singularity.
  • Observed the completion of a Lifshitz transition, evolving the Fermi surface from two electron pockets to a single giant hole pocket.
  • ARPES confirmed electronic structure renormalizations, not a rigid band shift.

Conclusions:

  • The study successfully accessed the beyond-van-Hove regime in epitaxial graphene.
  • This achievement provides a platform for exploring novel exotic phases in two-dimensional materials.
  • The findings offer new insights into the electronic behavior of highly doped graphene.