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Annealing-Dependent Breakdown Voltage and Capacitance of Gallium Oxide-Based Gallium Nitride MOSOM Varactors

Yu-Li Hsieh1,2, Liann-Be Chang3,4,5,6, Ming-Jer Jeng1,5

  • 1Department of Electronics Engineering, Chang Gung University, Guishan, Taoyuan 333, Taiwan.

Materials (Basel, Switzerland)
|November 7, 2020
PubMed

Keywords:
Ga2O3MOSOMMSMbreakdown voltagefurnace annealingheterojunctionvaractor

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