Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Area of Science:

• Materials Science
• Nanotechnology
• Organic Electronics

Background:

• Two-dimensional materials are crucial for advanced electronic applications.
• Covalent Organic Frameworks (COFs) offer tunable properties for novel devices.
• Resistive memory devices require stable and high-performance materials.

Purpose of the Study:

• To construct and characterize two-dimensional polyimide covalent organic framework (2D PI-NT COF) films.
• To fabricate and evaluate resistive memory devices utilizing these 2D PI-NT COF films.
• To investigate the resistive switching behavior and potential of 2D COFs for information storage.

Main Methods:

• Solvothermal synthesis of 2D PI-NT COF films from specific precursors.
• Fabrication of two-terminal sandwiched resistive memory devices on ITO-coated glass.
• Electrical characterization of memory devices, including write-once-read-many-time (WORM) behavior, ON/OFF ratio, and retention time.

Main Results:

• The 2D PI-NT COF films exhibited high crystallinity, good orientation, tunable thickness, and low surface roughness.
• Memory devices demonstrated typical WORM resistive switching behavior with high ON/OFF ratios (>10^6 positive scan, 10^4-10^6 negative scan).
• Devices showed long-term retention times, indicating high fidelity, low error, and stability.

Conclusions:

• The ordered donor-acceptor structure in 2D PI-NT COF films facilitates electric field-induced intramolecular charge transfer, enabling resistive switching.
• This work is the first to explore the resistive memory properties of 2D PI-COF films.
• 2D COFs show significant potential as next-generation information storage media.