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Published on: November 16, 2019
Wavefront Sensing for Evaluation of Extreme Ultraviolet Microscopy.
Mabel Ruiz-Lopez1, Masoud Mehrjoo1, Barbara Keitel1
1Deutsches Elektronen-Synchrotron (DESY), 22607 Hamburg, Germany.
Wavefront analysis effectively characterizes high-numerical-aperture optics, even in extreme ultraviolet (EUV) lithography. Two analysis methods confirmed precise alignment of Schwarzschild objectives, crucial for EUV applications.
Area of Science:
- Optics and Photonics
- Metrology
- Extreme Ultraviolet (EUV) Lithography
Background:
- Wavefront analysis is a key technique for optical system alignment and characterization across various spectral regions.
- High-numerical-aperture (NA) systems, particularly those used in extreme ultraviolet (EUV) lithography, present unique challenges for traditional wavefront analysis.
- Schwarzschild objectives are critical for achieving small foci in EUV photolithography, necessitating highly precise alignment.
Discussion:
- A high-NA Hartmann wavefront sensor was utilized at the free electron laser FLASH to characterize a Schwarzschild objective.
- The study addresses the challenges of applying wavefront analysis to optical systems with NA > 0.1.
- The characterization was performed on a Schwarzschild objective, a component vital for EUV photolithography.
Key Insights:
- The performance of a high-NA Hartmann wavefront sensor was evaluated for characterizing EUV optics.
- Two distinct wavefront analysis methods, centroid calculation and Fourier demodulation, were employed.
- Both analysis methods yielded consistent wavefront maps, demonstrating negligible discrepancies and validating the measurement approach.
Outlook:
- This work validates wavefront analysis techniques for high-NA EUV optical systems.
- The findings support the precise alignment of Schwarzschild objectives for advanced photolithography applications.
- Future research may explore further refinements in wavefront sensing for even more demanding optical metrology.
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