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Probing the dye-semiconductor interface in dye-sensitized NiO solar cells
Nathan T Z Potts1, Tamara Sloboda2, Maria Wächtler3
1Energy Materials Laboratory, Chemistry: School of Natural and Environmental Science, Newcastle University, Newcastle Upon Tyne NE1 7RU, United Kingdom.
The Journal of Chemical Physics
|November 14, 2020
Summary
Researchers investigated BODIPY dyes in p-type dye-sensitized solar cells (p-DSSCs). Fast charge recombination due to dye structure and NiO surface sites limits efficiency, hindering dye regeneration for improved solar energy conversion.
Area of Science:
- Materials Science
- Photovoltaics
- Electrochemistry
Background:
- p-type dye-sensitized solar cells (p-DSSCs) offer potential for higher efficiency tandem solar cells compared to traditional TiO2-based photoanodes.
- Understanding interfacial behavior is crucial for optimizing p-DSSC performance.
Purpose of the Study:
- To investigate the interfacial properties of BODIPY dyes (BOD1-3) in p-DSSCs.
- To correlate dye structure and electronic properties with p-DSSC performance.
- To identify factors limiting charge recombination and overall cell efficiency.
Main Methods:
- Photoelectron spectroscopy
- Transient absorption spectroscopy
- Fabrication and testing of p-DSSCs with BODIPY dyes
Main Results:
- BODIPY dyes exhibit appropriate orbital alignment with the NiO valence band for charge transfer.
- Charge recombination at the NiO interface is rapid, preventing efficient dye regeneration.
- Ni3+ sites on the NiO surface contribute to fast charge recombination.
Conclusions:
- The electronic structure of BODIPY dyes and Ni3+ sites on NiO surfaces impede efficient charge regeneration in p-DSSCs.
- Fast recombination is the primary limitation for achieving higher efficiencies in these systems.
- Further optimization requires addressing dye-semiconductor interface recombination pathways.
