Observation of Acoustic Charge Transport in GaN-Based Quantum Well Structures Under Surface Acoustic Wave Excitations

Though the acoustoelectric and acoustooptic interactions have been widely studied on III-V semiconductors, most studies were conducted at low temperature to avoid the influence of lattice scattering. Here, we demonstrate larger-than-1-GHz optical oscillation and acoustic charge transport at room temperature from a nitride-based LED (light-emitting diode) by acoustic wave excitation. The optical oscillation is generated by the harmonics of acoustic waves, while the acoustic transport of carriers was observed from the LED light output at different acoustic excitation frequencies. Furthermore, with the change of bias voltage, the frequency response of light output varies correspondingly due to the thermal disturbance that affects the lattice vibration and acoustic wave propagation. The results also suggest that we are able to achieve a tunable optical resonant frequency by varying bias voltages without changing the LED structure.