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Compositional Fluctuations Locked by Athermal Transformation Yielding High Thermoelectric Performance in GeTe
Yi-Fen Tsai1,2, Pai-Chun Wei3,4, Liuwen Chang1
1Department of Materials and Optoelectronic science, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan.
Sb doping in GeTe materials creates beneficial composition fluctuations, enhancing thermoelectric performance. This controlled phase transition leads to exceptional figures-of-merit (zT) exceeding 2.6.
Area of Science:
- Materials Science
- Solid State Physics
- Thermodynamics
Background:
- Phase transitions in thermoelectric (TE) materials present challenges for device operation but offer opportunities near electronic instabilities.
- Controlling these phase transitions is key to optimizing TE material properties.
Purpose of the Study:
- To investigate the effects of Sb doping on GeTe phase transitions and thermoelectric properties.
- To explore a new thermodynamic route for enhancing TE material performance.
Main Methods:
- Utilizing Sb doping to induce spontaneous composition fluctuations and uphill diffusion in GeTe.
- Analyzing the interplay between diffusionless athermal cubic-to-rhombohedral phase transition and Sb-induced fluctuations.
- Alloying GeTe with Sb2Te3 to modify microstructure and suppress thermal conductivity.
Main Results:
- Sb doping elicits composition fluctuations and phase coexistence (cubic and rhombohedral) in GeTe.
- Alloying with Sb2Te3 significantly reduces thermal conductivity while maintaining optimal carrier concentration.
- Achieved exceptional figures-of-merit (zT) greater than 2.6 over a wide composition range.
Conclusions:
- Phase transition manipulation via Sb doping is effective in optimizing GeTe microstructure for enhanced TE performance.
- The study demonstrates a novel thermodynamic approach to developing high-performance thermoelectric materials.
- These findings open new avenues for designing advanced TE devices.
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