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Updated: Nov 29, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Strong coupling of single quantum dots with low-refractive-index/high-refractive-index materials at room temperature
Xingsheng Xu1,2, Siyue Jin3,2
1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China. xsxu@semi.ac.cn.
Abstract:
Strong coupling between a cavity and transition dipole moments in emitters leads to vacuum Rabi splitting. Researchers have not reported strong coupling between a single emitter and a dielectric cavity at room temperature until now. In this study, we investigated the photoluminescence (PL) spectra of colloidal quantum dots on the surface of a SiO2/Si material at various collection angles at room temperature. We measured the corresponding reflection spectra for the SiO2/Si material and compared them with the PL spectra. We observed PL spectral splitting and regarded it as strong coupling between colloidal quantum dots and the SiO2/Si material. Upper polaritons and lower polaritons exhibited anticrossing behavior. We observed Rabi splitting from single-photon emission in the dielectric cavity at room temperature. Through analysis, we attributed the Rabi splitting to strong coupling between quantum dots and bound states in the continuum in the low-refractive-index/high-refractive-index hybrid material.

