Related Experiment Video

Updated: Nov 29, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.8K

Dual-Junction GaAs Photovoltaics for Low Irradiance Wireless Power Transfer in Submillimeter-Scale Sensor Nodes

Eunseong Moon1, Michael Barrow1, Jongyup Lim1

  • 1Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, MI 48109 USA.

IEEE Journal of Photovoltaics
|November 23, 2020
PubMed

Keywords:
Bio-implantsInternet of ThingsPhotovoltaic cellsWireless power transmission

More Related Videos

Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System12:08

Fabrication of High Contrast Gratings for the Spectrum Splitting Dispersive Element in a Concentrated Photovoltaic System

Published on: July 18, 2015

11.0K
Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling08:58

Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling

Published on: January 28, 2021

4.7K

Related Concept Videos

Maximum Power Transfer01:16

Maximum Power Transfer

Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
665
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
896
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
728
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
713
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
448