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Neuro-Transistor Based on UV-Treated Charge Trapping in MoTe2 for Artificial Synaptic Features
Shania Rehman1, Muhammad Farooq Khan1, Mehr Khalid Rahmani2
1Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul 05006, Korea.
Nanomaterials (Basel, Switzerland)
|December 1, 2020
Summary
Molybdenum ditelluride field-effect transistors (MoTe2 FETs) emulate synaptic functions, demonstrating short-term and long-term memory effects crucial for neuromorphic computing. These transistors show promise for advancing smart electronic systems.
Area of Science:
- Materials Science
- Neuroscience
- Computer Engineering
Background:
- Brain functions rely on neurotransmitter release at chemical synapses.
- Field-effect transistors (FETs) are being explored for neuromorphic computing.
- Molybdenum ditelluride (MoTe2) shows potential for emulating biological functions.
Purpose of the Study:
- To investigate MoTe2 FETs for neuromorphic computing applications.
- To modulate short-term and long-term memory effects using electron trapping/de-trapping.
- To explore synaptic plasticity mechanisms in MoTe2 transistors.
Main Methods:
- Treated MoTe2 flakes with deep ultraviolet light to induce hysteresis.
- Applied gate-voltage pulses to MoTe2 FETs to study electron trapping/de-trapping.
- Analyzed transfer curves to investigate synaptic behaviors like LTP, LTD, and STDP.
Main Results:
- MoTe2 FETs exhibit hysteresis, enabling emulation of synaptic functions.
- Demonstrated modulation of short-term and long-term memory effects.
- Identified time constants for potentiation (0.6 s) and depression (0.9 s).
- Achieved significant changes in synaptic weight (41% negative, 38% positive gate pulse).
Conclusions:
- MoTe2 FETs show promise as artificial synapses for neuromorphic systems.
- The observed synaptic plasticity mechanisms are comparable to biological synapses.
- Findings contribute to the development of advanced smart neuromorphic electronics.
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