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Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric
Seungbeom Choi1, Seungho Song1, Taegyu Kim1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
Micromachines
|December 1, 2020
Summary
Self-aligned top-gate oxide thin-film transistors (TFTs) using solution-processed indium-gallium-zinc-oxide (IGZO) and indium-gallium-oxide (IGO) demonstrate high performance. Selective Ar plasma treatment enables efficient source/drain contact formation for advanced displays.
Area of Science:
- Materials Science
- Electronics Engineering
- Semiconductor Physics
Background:
- High-speed and large-area active-matrix displays require metal-oxide thin-film transistors (TFTs) with high field-effect mobility and stability.
- Reducing RC delay is crucial for high-speed operation, necessitating minimized parasitic capacitance in TFTs.
- Self-aligned top-gate oxide TFTs offer advantages in reducing parasitic capacitance due to minimized source/drain and gate electrode overlap.
Purpose of the Study:
- To demonstrate self-aligned top-gate oxide TFTs using solution-processed indium-gallium-zinc-oxide (IGZO) and indium-gallium-oxide (IGO) channel layers.
- To investigate the effectiveness of selective Ar plasma treatment for forming low-resistance source/drain contacts.
- To evaluate the performance characteristics of fabricated self-aligned top-gate oxide TFTs.
Main Methods:
- Fabrication of self-aligned top-gate oxide TFTs utilizing solution-processed IGZO and indium-gallium-oxide (IGO) nanowires (NWs) as channel materials.
- Application of selective Ar plasma treatment on the IGZO channel to create homojunction source/drain (S/D) contacts.
- Characterization of TFT performance, including field-effect mobility and on/off ratio.
Main Results:
- Fabricated self-aligned top-gate IGZO TFTs achieved a field-effect mobility of 3.93 cm²/Vs and an on/off ratio of ~10⁶.
- The Ar plasma treatment resulted in low-resistance IGZO regions with a sheet resistance of ~20.6 kΩ/sq.
- Self-aligned top-gate IGO NW TFTs exhibited a field-effect mobility of 0.03 cm²/Vs and an on/off ratio of >10⁵.
Conclusions:
- The developed Ar plasma treatment for source/drain contact formation and solution-processed poly(4-vinylphenol) (PVP) gate dielectric are viable for realizing high-performance self-aligned top-gate oxide TFTs.
- Self-aligned top-gate oxide TFTs show comparable performance to bottom-gate structures, indicating their potential for advanced display applications.
- The study highlights the feasibility of solution-processed materials and plasma treatments for fabricating efficient oxide TFTs.
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