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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

867
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
867
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

630
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
630
Biasing of FET01:22

Biasing of FET

509
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
509
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

643
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
643
Characteristics of JFET01:21

Characteristics of JFET

900
Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
900

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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High performance ionic-liquid-gated air doped diamond field-effect transistors.

Bo Hsu1, Sidra Farid1, Joseph Averion-Puttrich1

  • 1Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, IL 60607, United States of America.

Nanotechnology
|December 4, 2020
PubMed
Summary
This summary is machine-generated.

High-performance hydrogenated diamond field-effect transistors (FETs) were successfully fabricated. These stable devices exhibit high Hall mobility, paving the way for advanced diamond electronics research.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Device Engineering

Background:

  • Diamond is a promising material for high-performance electronic devices due to its excellent thermal and electrical properties.
  • Fabricating stable and high-performance diamond-based field-effect transistors (FETs) remains a challenge.
  • Hydrogen-termination of diamond surfaces is crucial for achieving high carrier mobility.

Purpose of the Study:

  • To report the successful fabrication of high-performance ion-gated FETs on hydrogenated diamond.
  • To demonstrate a rapid and stable fabrication scheme for diamond FET devices.
  • To investigate the electrical properties and stability of hydrogen-terminated diamond surfaces.

Main Methods:

  • Hydrogen plasma treatment for H-termination of diamond surfaces.
  • Hall effect measurements to determine carrier mobility and sheet resistivity.
  • Device characterization of ion-gated FETs, including conductivity as a function of gate bias.
  • Stability testing of H-terminated diamond surfaces at elevated temperatures (up to 350 °C) and over time.

Main Results:

  • Achieved Hall mobility as high as ~200 cm² V⁻¹ s⁻¹ on H-terminated diamond.
  • Demonstrated a low sheet resistivity of ~1.3 kΩ/sq.
  • Observed stable device performance and carrier densities for over 3 weeks in ambient air, even up to 350 °C.
  • Identified temperature limits beyond which hydrogenation is affected.

Conclusions:

  • Successful fabrication of high-performance ion-gated FETs on hydrogenated diamond is reported.
  • The developed rapid fabrication scheme yields stable devices suitable for research.
  • The findings open new avenues for fundamental research on diamond FET devices with ease of fabrication and high throughput.