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Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning.

Tommaso Jacopo Giammaria1, Ahmed Gharbi1, Anne Paquet1

  • 1CEA-Leti, Département des Plateformes Technologiques, University Grenoble Alpes, F-38000 Grenoble, France.

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Summary

This study introduces a novel, resist-free chemo-epitaxy method for directed self-assembly of block copolymers on 300 mm wafers. This technique enables precise control over critical dimensions for advanced semiconductor manufacturing.

Keywords:
block copolymers (BCPs)chemo-epitaxydirected self-assembly (DSA)line edge roughness (LER)line width roughness (LWR)line/space patterningpolystyrene-block-polymethylmethacrylate (PS-b-PMMA)

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Directed self-assembly (DSA) is crucial for advanced lithography.
  • Block copolymers (BCPs) offer nanoscale pattern formation capabilities.
  • Existing methods often require complex processes or resist materials.

Purpose of the Study:

  • To develop a novel, resist-free chemo-epitaxy process for DSA of BCPs.
  • To enable directed self-assembly of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) on 300 mm wafers.
  • To achieve precise control over pattern dimensions and roughness for semiconductor applications.

Main Methods:

  • Utilized 193i lithography to create topographical guiding silicon oxide line/space patterns.
  • Employed wet or dry etching for trimming critical dimensions (CD) of silicon oxide lines.
  • Formed chemical patterns using a polystyrene (PS) guide and brush layers of polystyrene-random-polymethylmethacrylate (PS-r-PMMA) for DSA.

Main Results:

  • Demonstrated a resist-free chemo-epitaxy process for DSA of PS-b-PMMA BCPs.
  • Achieved fine-tuning of guideline and background dimensions through CD trimming.
  • Presented data on line edge roughness (LER) and line width roughness (LWR) relevant to semiconductor technology.

Conclusions:

  • The developed chemo-epitaxy process is simple and effective for DSA of BCPs.
  • The method allows for precise control over pattern dimensions, meeting semiconductor industry standards.
  • The findings contribute to advanced patterning techniques for next-generation electronic devices.