Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.5K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.5K
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

606
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
606
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

437
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
437
Induced Electric Dipoles01:28

Induced Electric Dipoles

4.6K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.6K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

702
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
702

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

All-two-dimensional, ion-gating synaptic transistors for high-temperature and ultralow-energy-consumption neuromorphic applications.

Science advances·2026
Same author

Vacuum Pyrolysis Engineered CoSb/C Scaffold for Sodium Metal Anodes with Sodiophilic and Superionic Interphase.

Nano letters·2026
Same author

Operando identification of anion effect on lithium nucleation and growth via in situ transmission electron microscopy.

Nature communications·2026
Same author

Switchable adhesion of phase-transition eutectogels with integrated machine learning-enhanced intelligent adhesion sensing.

Nature communications·2026
Same author

Indium-Mediated Glue-Like Interlayer Enables Stable High-Capacity Flexible Sodium Metal Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Machine learning identifies traffic-related pollutant mixtures as potential factors suggestive of association with osteoporosis in a cross-sectional analysis of NHANES.

Medicine·2026

Related Experiment Video

Updated: Nov 26, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Electric Polarization Switching on an Atomically Thin Metallic Oxide.

Mao Ye1, Songbai Hu1, Yuanmin Zhu2,3

  • 1Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China.

Nano Letters
|December 11, 2020
PubMed
Summary

Researchers created a novel two-dimensional (2D) ferroelectric-like metal by layering strontium ruthenium oxide and barium titanate. This breakthrough material exhibits reversible polarization switching within a metallic layer, defying previous scientific understanding.

Keywords:
2D electrical conductivityatomically thin layerelectric polarization switchingferroelectric metalsuperlattice

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.8K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.2K

Related Experiment Videos

Last Updated: Nov 26, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.8K
Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.2K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Materials

Background:

  • Reduced-dimension materials exhibit exotic properties and quantum states.
  • Polarization switching and metallic screening are typically mutually exclusive in bulk solids.

Purpose of the Study:

  • To fabricate and investigate superlattices exhibiting coexisting ferroelectric and metallic properties.
  • To explore novel quantum states in engineered layered materials.

Main Methods:

  • Fabrication of (SrRuO3)1/(BaTiO3)10 superlattices.
  • Multiprofonged investigation including structural analyses and electrical measurements.
  • First-principles electronic structure calculations.

Main Results:

  • Demonstrated reversible polarization switching in an atomically thin metallic layer.
  • Unraveled coexistence of two-dimensional (2D) metallicity and broken inversion symmetry.
  • Confirmed electric polarization along the out-of-plane direction in the SrRuO3 layer.

Conclusions:

  • Engineered a 2D ferroelectric-like metal with coexisting ferroelectric and metallic properties.
  • Paved a novel way to engineer quantum multistates manipulated by external fields.
  • Challenged conventional understanding of material properties at reduced dimensions.