Doping Effect on Cu₂Se Thermoelectric Performance: A Review

Area of Science:

• Materials Science
• Solid State Physics
• Nanotechnology

Background:

• Copper selenide (Cu₂Se) exhibits excellent intrinsic thermoelectric (TE) properties due to "liquid-like" copper ion behavior.
• Further enhancement of the figure of merit (ZT) in Cu₂Se is crucial for its commercial viability.
• Doping presents a promising avenue for improving the TE performance of Cu₂Se.

Purpose of the Study:

• To summarize various doping elements used to enhance the TE performance of Cu₂Se.
• To analyze the mechanisms behind TE performance improvement in doped Cu₂Se.
• To propose future research directions for optimizing doped Cu₂Se.

Main Methods:

• Literature review of doping elements (main and transitional groups) applied to Cu₂Se.
• Analysis of the impact of doping on TE properties.
• Identification of key factors influencing TE performance enhancement.

Main Results:

• Doping has successfully increased the ZT value of Cu₂Se, with Al-doped samples reaching a ZT of 2.62.
• Various doping elements have been investigated, showing significant improvements over pristine Cu₂Se.
• Mechanisms for TE performance enhancement through doping have been elucidated.

Conclusions:

• Doping is an effective strategy to significantly boost the thermoelectric figure of merit (ZT) of Cu₂Se.
• Understanding doping mechanisms is key to further optimizing TE performance.
• Continued research into doping strategies holds potential for advancing Cu₂Se-based thermoelectric devices.