Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Nov 24, 2025

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.2K

In-plane anisotropic 2D Ge-based binary materials for optoelectronic applications.

Yusi Yang1, Shun-Chang Liu2, Zongbao Li3

  • 1Beijing National Laboratory for Molecular Sciences (BNLMS), CAS Key Laboratory of Molecular Nanostructure and Nanotechnology, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. djxue@iccas.ac.cn hujs@iccas.ac.cn.

Chemical Communications (Cambridge, England)
|December 21, 2020
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Network meta-analysis of different traditional Chinese medicine therapies as adjuvant treatments for Alzheimer's disease.

Complementary therapies in clinical practice·2026
Same author

Multiscale cathode design for high-temperature proton exchange membrane fuel cells.

Chemical Society reviews·2026
Same author

Catalyst-Support Synergy for CO<sub>2</sub>-Involved Electrochemical C-N Coupling Reactions.

ChemSusChem·2026
Same author

Correction: Radiomics analysis of multi-sequence MR images for predicting microsatellite instability status preoperatively in rectal cancer.

Frontiers in oncology·2026
Same author

Dual-Cation Batteries via Synergistic Cation-Sieving Electrodes and Tailored Electrolytes.

Angewandte Chemie (International ed. in English)·2026
Same author

Parental age and its influence on functional dependency and cognitive decline in older adults: a cohort analysis.

Journal of health, population, and nutrition·2026
This summary is machine-generated.

Anisotropic 2D germanium-based materials offer tunable properties for broadband photodetection. Their unique structural, electrical, and optical characteristics enable advanced optoelectronic devices like polarization-sensitive photodetectors.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Low-symmetry two-dimensional (2D) materials exhibit unique in-plane anisotropic physical properties.
  • Anisotropic germanium (Ge)-based binary materials offer earth-abundant compositions, stability, and tunable bandgaps.

Purpose of the Study:

  • To review recent advancements in in-plane anisotropic 2D Ge-based binary materials.
  • To highlight their structural, electrical, and optical properties.
  • To discuss their optoelectronic applications.

Main Methods:

  • Literature review of research on anisotropic 2D Ge-based materials.
  • Analysis of structural, electrical, and optical property data.
  • Examination of optoelectronic device demonstrations.

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.0K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.0K

Related Experiment Videos

Last Updated: Nov 24, 2025

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

8.2K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.0K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.0K

Main Results:

  • Anisotropic Ge-based materials exhibit significant variations in properties along different crystal axes.
  • These materials demonstrate potential for broadband photodetection across IR to UV spectrum.
  • Applications include polarization-sensitive photodetection and all-optical switches.

Conclusions:

  • In-plane anisotropic 2D Ge-based materials are a promising new class for advanced optoelectronics.
  • Further research can unlock new opportunities in this rapidly expanding field.