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Updated: Nov 23, 2025

The Deese-Roediger-McDermott DRM Task: A Simple Cognitive Paradigm to Investigate False Memories in the Laboratory
Published on: January 31, 2017
The effect of language proficiency and associative strength on false memory
Maria Soledad Beato1, Jason Arndt2
1Faculty of Psychology, University of Salamanca, 37005, Salamanca, Spain. msol@usal.es.
False memory recall is stronger in a dominant language (L1) than a non-dominant language (L2). Increased L2 proficiency enhances false memory in L2, especially with weaker word associations.
Area of Science:
- Cognitive Psychology
- Psycholinguistics
- Memory Studies
Background:
- False memories, or recalling information that was never experienced, are influenced by language.
- Associative strength, the likelihood of words being recalled together, plays a role in memory production.
Purpose of the Study:
- To investigate how language proficiency and associative strength affect false memory production.
- To compare false memory recall in a dominant (L1) versus non-dominant (L2) language.
Main Methods:
- Two experiments used Deese-Roediger-McDermott word lists, varying in backward associative strength (BAS).
- Participants included native Spanish speakers with varying English proficiency levels.
- False recognition rates were measured in both Spanish (L1) and English (L2).
Main Results:
- False recognition was significantly higher in the dominant language (Spanish) compared to the non-dominant language (English).
- In Experiment 2, higher English proficiency correlated with increased false recognition in English, particularly for low-BAS lists.
- High-BAS lists consistently produced more false recognition than low-BAS lists across both languages.
Conclusions:
- Language dominance significantly impacts false memory formation, with stronger effects in L1.
- L2 proficiency can mitigate the difference in false memory recall between L1 and L2.
- Backward associative strength is a robust predictor of false memory, irrespective of language proficiency or knowledge.
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