Correction: Largely enhanced thermoelectric effect and pure spin current in silicene-based devices under hydrogen

G Qiao1, F X Tan2, L Y Yang3

  • 1School of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu 215500, China. xfyang@cslg.edu.cn ysliu@cslg.edu.cn.

Nanoscale
|January 6, 2021
PubMed
Summary

This correction clarifies that hydrogen modification significantly boosts the thermoelectric effect and pure spin current in silicene devices. These advancements are crucial for next-generation nanoelectronic applications.