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Updated: Nov 22, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Single-defect phonons imaged by electron microscopy
Xingxu Yan1,2, Chengyan Liu3,4, Chaitanya A Gadre3
1Department of Materials Science and Engineering, University of California, Irvine, Irvine, CA, USA.
Abstract:
Crystal defects affect the thermal and heat-transport properties of materials by scattering phonons and modifying phonon spectra1-8. To appreciate how imperfections in solids influence thermal conductivity and diffusivity, it is thus essential to understand phonon-defect interactions. Sophisticated theories are available to explore such interactions, but experimental validation is limited because most phonon-detecting spectroscopic methods do not reach the high spatial resolution needed to resolve local vibrational spectra near individual defects. Here we demonstrate that space- and angle-resolved vibrational spectroscopy in a transmission electron microscope makes it possible to map the vibrational spectra of individual crystal defects. We detect a red shift of several millielectronvolts in the energy of acoustic vibration modes near a single stacking fault in cubic silicon carbide, together with substantial changes in their intensity, and find that these changes are confined to within a few nanometres of the stacking fault. These observations illustrate that the capabilities of a state-of-the-art transmission electron microscope open the door to the direct mapping of phonon propagation around defects, which is expected to provide useful guidance for engineering the thermal properties of materials.
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