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Published on: September 19, 2020
Atomic Oxygen-Resistant Polyimide Composite Films Containing Nanocaged Polyhedral Oligomeric Silsesquioxane
Yan Zhang1, Hao Wu1, Yi-Dan Guo1
1Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China.
New polyimide (PI) composite films with nanocaged polyhedral oligomeric silsesquioxane (POSS) show enhanced atomic oxygen (AO) resistance for spacecraft in low Earth orbit (LEO). These POSS-containing PI films demonstrate superior AO erosion resistance and self-healing properties.
Area of Science:
- Materials Science
- Polymer Chemistry
- Aerospace Engineering
Background:
- Standard polyimide (PI) films exhibit poor atomic oxygen (AO) resistance, limiting their use in low Earth orbit (LEO) spacecraft.
- Development of high-temperature resistant polymer films with long-term AO resistance is crucial for long-servicing spacecraft.
Purpose of the Study:
- To prepare novel AO-resistant PI composite films incorporating nanocaged polyhedral oligomeric silsesquioxane (POSS) components.
- To evaluate the thermal stability, dimensional stability, and AO resistance of the developed POSS-containing PI films.
Main Methods:
- Synthesized POSS-containing PI matrix films using a POSS-substituted diamine (DABA-POSS) and standard monomers (ODA, PMDA) via thermal imidization.
- Incorporated trisilanolphenyl POSS (TSP-POSS) as a filler at a fixed proportion (20 wt%) into the PI matrix.
- Characterized thermal properties (T5% weight loss, CTE) and AO erosion yield (Es) under AO exposure.
Main Results:
- POSS incorporation improved thermal stability but slightly decreased high-temperature dimensional stability.
- POSS-PI-20 film showed a T5% of 564 °C and CTE of 81.0 × 10⁻⁶/K.
- POSS-PI-30 exhibited an exceptionally low AO erosion yield (1.64 × 10⁻²⁶ cm³/atom), over two orders of magnitude lower than reference PI, with detected silica/silicate passivation layers.
Conclusions:
- POSS components effectively enhance AO resistance and impart self-healing characteristics to PI composite films.
- The developed POSS-containing PI films are promising materials for long-duration spacecraft applications in LEO.
- Formation of inert passivation layers contributes to the superior AO resistance.
