Related Experiment Video
Updated: Nov 21, 2025
07:14
Author Spotlight: Experimental Approaches for the Synthesis of Low-Valent Metal-Organic Frameworks from Multitopic Phosphine Linkers
Published on: May 12, 2023
3.5K
Linker Expansion and Its Impact on Switchability in Pillared-Layer MOFs
Nadine Bönisch1, Mariia Maliuta1, Irena Senkovska1
1Chair of Inorganic Chemistry I, Technische Universität Dresden, 01069 Dresden, Germany.
Inorganic Chemistry
|January 13, 2021
Summary
Linker elongation in metal-organic frameworks (MOFs) allows systematic tuning of porosity. New MOFs show distinct structural responses to stimuli, revealing how linker structure impacts framework flexibility and switchability.
Area of Science:
- Materials Science
- Chemistry
- Crystallography
Background:
- Metal-organic frameworks (MOFs) offer tunable porosity and pore size through linker modification.
- Flexible MOFs provide a platform for studying structure-property relationships and responsiveness to external stimuli.
Purpose of the Study:
- To synthesize and characterize new isoreticular MOFs with elongated linkers.
- To investigate the impact of linker structure on the flexibility and responsiveness of pillared-layer MOFs.
- To elucidate the energetic factors governing phase transitions in these flexible frameworks.
Main Methods:
- Synthesis of new MOFs with 4,4'-biphenyldicarboxylate (4,4'-bpdc) and 4,4'-stilbenedicarboxylate (4,4'-sdc) linkers.
- In situ Powder X-ray Diffraction (PXRD) to study structural response to desolvation and adsorption.
- Theoretical calculations to analyze framework energetics and phase transitions.
Main Results:
- Two new MOFs, isoreticular to DUT-8(Ni), were successfully synthesized using longer linkers.
- Distinct differences in structural flexibility and responsiveness were observed upon linker elongation.
- Energetics of linker bending and dispersion interactions were identified as key factors in MOF switchability.
Conclusions:
- Linker elongation is a viable strategy to systematically control porosity and flexibility in MOFs.
- The structure of the organic linker significantly influences the framework's response to molecular stimuli.
- Understanding linker energetics is crucial for designing MOFs with tailored responsive properties.
Related Concept Videos
01:22MOSFET: Enhancement Mode
611
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
611
00:49Ligand Binding and Linkage
5.2K
Allosteric proteins have more than one ligand binding site; the binding of a ligand to any of these sites influences the binding of ligands to the other sites. When a protein is allosteric, its binding sites are called coupled or linked. In the case of enzymes, the site that binds to the substrate is known as the active site and the other site is known as the regulatory site. When a ligand binds to the regulatory site, this leads to conformational changes in the protein that can influence...
5.2K
01:25MOS Capacitor
1.2K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.2K
01:24Metal-Semiconductor Junctions
671
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
671
01:17Characteristics of MOSFET
677
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
677
01:27Biasing of Metal-Semiconductor Junctions
430
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
430