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Mapping Defect Relaxation in Quantum Dot Solids upon In Situ Heating.

Michelle A Smeaton¹, Ismail El Baggari², Daniel M Balazs³

¹Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.

|January 14, 2021

Summary

Thermal annealing effectively eliminates tensile and shear defects in quantum dot solids, a key step for tunable electronic properties. Bending defects persist, requiring further investigation for advanced materials development.

Keywords:

defects in situ heating nanocrystals quantum dot solids scanning transmission electron microscopy self-assembly strain

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Area of Science:

Materials Science
Nanotechnology
Quantum Physics

Background:

Epitaxially connected quantum dot solids offer tunable electronic structures.
Defective interdot connections hinder the realization of predicted emergent electronic properties.

Purpose of the Study:

To investigate the atomic-scale mechanisms of thermal annealing on defects in quantum dot solids.
To understand how different defect types respond to heating for improved material properties.

Main Methods:

Utilized in situ heating within a scanning transmission electron microscope.
Applied a local strain mapping technique to identify lattice defects.
Tracked the out-of-plane orientation of individual quantum dots during annealing.

Main Results:

Mild thermal annealing completely relaxed tensile and shear defects in interdot connections.
Bending defects were found to persist after annealing.
Annealing increased the number of correctly oriented quantum dots, indicating relaxation of twisting or bending defects.

Conclusions:

Thermal annealing is effective in removing critical tensile and shear defects in quantum dot solids.
Persistent bending defects necessitate further research into orientational ordering during superlattice formation.
These findings represent a significant advancement towards achieving delocalized charge carriers and tunable electronic properties in quantum dot materials.